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Dec 26, 2024
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ECSE 6260 - Semiconductor Power Devices
Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, microplasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor.
Prerequisites/Corequisites: Prerequisites: ECSE 6230 and ECSE 6290 or basic knowledge (at the graduate level) of semiconductor devices or permission of the instructor.
When Offered: Spring term odd-numbered years.
Credit Hours: 3
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